کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489042 1524349 2017 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers
چکیده انگلیسی
Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg1-xCdxTe are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg1-xCdxTe layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 480, 15 December 2017, Pages 1-5
نویسندگان
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