کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489093 | 1524350 | 2017 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Lifetime and migration length of B-related admolecules on diamond {1Â 0Â 0}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The growth of heavily B-doped low-resistivity diamond films will facilitate the development of novel semiconductor applications. To discuss the key factors that increase B solubility into single-crystal {1 0 0} diamond, the misorientation-angle (θmis) dependences of B incorporation were compared between hot filament (HF) and microwave plasma (MW)-enhanced chemical vapor deposition. Based on the model that considers the step-flow motion, the lifetime of B-related admolecules (Ï) on terrace surface was evaluated. We found that Ï can be extended more than â¼13 times by utilizing HF growth. As a result, the longer migration length of B-related admolecules (ÏB) was evidenced. Conversely, shorter Ï and ÏB were revealed for MW growth which limit the B incorporation (probably due to etching). This study will provide an important insight to increase the B solubility.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 479, 1 December 2017, Pages 52-58
Journal: Journal of Crystal Growth - Volume 479, 1 December 2017, Pages 52-58
نویسندگان
Shinya Ohmagari, Masahiko Ogura, Hitoshi Umezawa, Yoshiaki Mokuno,