کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489183 | 1524352 | 2017 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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![عکس صفحه اول مقاله: Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources](/preview/png/5489183.png)
چکیده انگلیسی
Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron nitride (PBN) cavity of the RF plasma source. In this paper we discuss the unintentional B incorporation for PA-MBE growth of GaN and AlxGa1âxN using a highly efficient RF plasma source. We have studied a wide range of MBE growth conditions for GaN and AlxGa1âxN with growth rates from 0.2 to 3 µm/h, RF powers from 200 to 500 W, different nitrogen flow rates from 1 to 25 sccm and growth times up to several days. The chemical concentrations of B and matrix elements of Al, Ga, N were studied as a functions of depth using secondary ion mass spectrometry (SIMS). We demonstrate that boron incorporation with this highly efficient RF plasma source is approximately 1Ã1018 to 3Ã1018 cmâ3 for the AlxGa1âxN growth rates of 2 - 3 µm/h.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 154-158
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 154-158
نویسندگان
S.V. Novikov, C.T. Foxon,