کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489190 | 1524352 | 2017 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interlayer exchange coupling in MBE-grown GaMnAs-based multilayer systems
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Interlayer exchange coupling (IEC) of GaMnAs-based multilayers has been investigated by varying the structural parameters, such as spacer thickness, carrier doping in the nonmagnetic layers, and repetition number of GaMnAs/GaAs bilayers. The type of IEC in the structure (i.e., either ferromagnetic or antiferromagnetic IEC) was identified from the magnetotransport measurements, which show either anisotropic magnetoresistance or giant magnetoresistance-like behavior. The investigation revealed that the parameters of the ferromagnetic GaMnAs layer (i.e., Mn composition and thickness) are less important than those of the non-magnetic GaAs spacer layer in the structure. In particular, it was found that the presence of carriers in the spacer layer plays a crucial role in determining the type and strength of the IEC in GaMnAs-based multilayer systems.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 188-192
Journal: Journal of Crystal Growth - Volume 477, 1 November 2017, Pages 188-192
نویسندگان
Hakjoon Lee, Sangyeop Lee, Seonghoon Choi, Seul-Ki Bac, Sanghoon Lee, Xiang Li, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna,