کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489385 | 1524359 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE Exploiting strain to enhance the Bi incorporation in GaAs-based III/V semiconductors using MOVPE](/preview/png/5489385.png)
چکیده انگلیسی
Ga(NAsBi) structures were grown by MOVPE at a low temperature, 400 °C, and compared to Ga(PAsBi) as well as Ga(AsBi) growth. By using the two group V atoms P and N, which have a smaller covalent radius than Bi, the effect of local strain compensation was investigated systematically. The comparison of Bi incorporation in the two quaternary materials systems proved the importance of local strain for the limitation of Bi incorporation, in addition to other effects, like Bi surface coverage and hydrocarbon groups at the growth surface. This, of course, also opens up ways to strain-state-engineer the Bi incorporation in semiconductor alloys.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 15-19
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 15-19
نویسندگان
L. Nattermann, P. Ludewig, E. Sterzer, K. Volz,