کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489783 | 1524371 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device](/preview/png/5489783.png)
چکیده انگلیسی
Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87-13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile “activator” - beryllium (Be) atom in p-type InGaAsP.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 458, 15 January 2017, Pages 110-114
Journal: Journal of Crystal Growth - Volume 458, 15 January 2017, Pages 110-114
نویسندگان
Lian Ji, Ming Tan, Chao Ding, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang,