کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489789 | 1524371 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition
ترجمه فارسی عنوان
کریستالیزاسیون غیر کلاسیک فیلمهای نازک سیلیکون در هنگام رسوب بخار شیمیایی سیم داغ
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The deposition behavior of silicon films by hot wire chemical vapor deposition (HWCVD) was approached by non-classical crystallization, where the building block of deposition is a nanoparticle generated in the gas phase of the reactor. The puzzling phenomenon of the formation of an amorphous incubation layer on glass could be explained by the liquid-like property of small charged nanoparticles (CNPs), which are generated in the initial stage of the HWCVD process. Using the liquid-like property of small CNPs, homo-epitaxial growth as thick as ~150 nm could be successfully grown on a silicon wafer at 600 °C under the processing condition where CNPs as small as possible could be supplied steadily by a cyclic process which periodically resets the process. The size of CNPs turned out to be an important parameter in the microstructure evolution of thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 458, 15 January 2017, Pages 8-15
Journal: Journal of Crystal Growth - Volume 458, 15 January 2017, Pages 8-15
نویسندگان
Jae-Soo Jung, Sang-Hoon Lee, Da-Seul Kim, Kun-Su Kim, Soon-Won Park, Nong-Moon Hwang,