کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489811 | 1524364 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structures](/preview/png/5489811.png)
چکیده انگلیسی
Most notably, two temperature regimes could be established, which show a significantly different behavior with regard to material distribution. Above 900 °C of wafer carrier temperature, the shell thickness along the growth axis of the rods was very homogeneous, however variations between vicinal rods increase. In contrast, below 830 °C the shell thickness is higher close to the microrod tip than at the base of the rods, while the lateral homogeneity between neighboring microrods is very uniform. This temperature effect could be either amplified or attenuated by changing the remaining growth parameters such as reactor pressure, structure distance, gallium precursor, carrier gas composition and dopant materials. Possible reasons for these findings are discussed with respect to GaN decomposition as well as the surface and gas phase diffusion of growth species, leading to an improved control of the functional layers in next-generation 3D V-III devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 465, 1 May 2017, Pages 34-42
Journal: Journal of Crystal Growth - Volume 465, 1 May 2017, Pages 34-42
نویسندگان
Tilman Schimpke, Adrian Avramescu, Andreas Koller, Amalia Fernando-Saavedra, Jana Hartmann, Johannes Ledig, Andreas Waag, Martin Strassburg, Hans-Jürgen Lugauer,