کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489840 | 1524373 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy](/preview/png/5489840.png)
چکیده انگلیسی
The growth of thick InGaN layers on free-standing GaN (0001¯) substrates was studied using tri-halide vapor phase epitaxy. It was found that high-indium-content InGaN can be grown under higher InCl3 input partial pressure at higher growth temperature, which allows the fabrication of a high crystalline quality InGaN layer with a smooth surface morphology. Using the growth conditions of high InCl3 input partial pressure and high growth temperature, crack- and droplet-free InGaN layers with a thickness of over 10 µm and with an indium fraction of 0.05 were successfully grown. Although the surface showed many hillocks, the number of hillocks was reduced upon growth of thicker InGaN layers. Photoluminescence measurements confirm that thick InGaN layers could be successfully grown without degradation of the crystalline quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 456, 15 December 2016, Pages 145-150
Journal: Journal of Crystal Growth - Volume 456, 15 December 2016, Pages 145-150
نویسندگان
Takahide Hirasaki, Martin Eriksson, Quang Tu Thieu, Fredrik Karlsson, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Per Olof Holtz, Akinori Koukitu,