کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
596986 | 1454058 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electrical characterization of intrinsic n-type In2O3 nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor–liquid–solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm−3 and an electron mobility of 85 cm2/V s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Colloids and Surfaces A: Physicochemical and Engineering Aspects - Volumes 313–314, 1 February 2008, Pages 308–311
Journal: Colloids and Surfaces A: Physicochemical and Engineering Aspects - Volumes 313–314, 1 February 2008, Pages 308–311
نویسندگان
Gunho Jo, Woong-Ki Hong, Jongsun Maeng, Tae-Wook Kim, Gunuk Wang, Ahnsook Yoon, Soon-Shin Kwon, Sunghoon Song, Takhee Lee,