کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6456993 1420662 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature deposition of VO2 films with high crystalline degree by embedding multilayered structure
ترجمه فارسی عنوان
رسوب در دمای پایین از فیلم VO2 با درجه کریستالی بالا تعبیه شده توسط ساختار چند لایه
کلمات کلیدی
رسوب کم دما؛ دیاکسید وانادیوم؛ ساختار چند لایه؛ Epitaxial؛ درجه بالایی از تبلور؛ پنجره های هوشمند
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی


- Magnetron sputtering of VO2 was realized at 300 °C without annealing.
- VO2/TiO2/ZnO/Substrate displays better optical performance for smart window.
- Epitaxial relationship is VO2(M)(010)[100]//TiO2 (100)[001]//ZnO(001)[100], [010], [-1-10].

It is a long-standing challenge in the fabrication of single-phase VO2 films at low temperature on Si substrate or glass substrate due to their thermodynamic phase-instability and the polymorphic structures. Recently, the demand for high-quality thin films deposited at low temperature is strongly pushed by their applications on devices and smart windows. Thermochromic films of VO2, as well as multilayer films of VO2/ZnO and VO2/TiO2/ZnO, were made by magnetron sputtering method and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, (scanning) transmission electron microscopy ((S)TEM) and Electron energy loss spectroscopy (EELS). Films with high crystalline degree VO2 single crystal phase were obtained at a fairly low temperature of 300 °C without subsequent annealing by embedding ZnO and TiO2 layers between VO2 and substrates. It is demonstrated that VO2/TiO2/ZnO films could display higher luminous transmittance and better semiconductor to metal transition (SMT) performance. Our data can serve a promising point for industrial production with high degree of crystallinity at a low temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 161, March 2017, Pages 70-76
نویسندگان
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