کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6457585 | 1420664 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of performance-limiting defects in pn junction GaAs solar cells grown by water-mediated close-spaced vapor transport epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Precursor and substrate costs currently limit the adoption of III-V photovoltaics for large scale manufacturing. Here, we use water-mediated close-spaced vapor transport (CSVT) to produce homojunction GaAs devices with pressed GaAs powder as an alternative to expensive gas-phase precursors. These unpassivated devices reach Voc >910Â mV, demonstrating the plausibility of CSVT as an alternative method for growth of III-V epitaxial films for photovoltaic devices. We find that Zn-doping of the absorber films decreases after a number of growths cycles using a single source, which suggests an alternative transport agent should be investigated for p-type doping. Performance of these solar cells is largely limited by formation of macroscopic surface defects which we find to be caused by particulate transfer from the source material and the formation of oxide phases during growth. We present strategies for mitigating these defects and improving device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 159, January 2017, Pages 546-552
Journal: Solar Energy Materials and Solar Cells - Volume 159, January 2017, Pages 546-552
نویسندگان
J.W. Boucher, A.L. Greenaway, K.E. Egelhofer, S.W. Boettcher,