کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6472025 1424126 2017 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation and Characterization of a Pd modified Ti/SnO2-Sb anode and its electrochemical degradation of Ni-EDTA
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Preparation and Characterization of a Pd modified Ti/SnO2-Sb anode and its electrochemical degradation of Ni-EDTA
چکیده انگلیسی


- Pd modified Ti/SnO2-Sb anode was successfully prepared and used to degrade Ni-EDTA.
- Pd doping could effectively change the surface morphology and lattice parameters.
- The interaction of metals influenced the electrochemical performance.
- The degradation capability and lifetime of the electrode was studied.

An optimized metal oxide electrode (Ti/SnO2-Sb-Pd) was prepared via thermal decomposition and used in the electrochemical degradation of Ni-EDTA. The electrode was characterized by SEM, XRD, XPS, and electrochemical characterizations including linear-sweep voltammetry (LSV), cyclic voltammetry (CV) and chronopotentiometry (CP) techniques. It was found that Pd doping could effectively change the surface morphology and lattice parameters of the metal oxide electrode. Pd can facilitate the entry of more Sb into SnO2 crystals and promote the reduction of Sb from the +5 to the +3 state. The interaction of these metals raised the oxygen evolution potential (OEP) and electrochemical surface area of the electrode, in addition to reducing the degradation potential and increasing the degradation current of Ni-EDTA. When the molar ratio of Pd:Sn was 2.5%, the electrode could simultaneously degrade 87.5% of Ni-EDTA and recycle 17.9% of elemental Ni on the cathode within 120 min. At the same time, with Pd doping, the lifetime of the electrode was increased more than 40 times, demonstrating good potential for application in industry.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 231, 20 March 2017, Pages 354-362
نویسندگان
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