کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6533919 | 1420638 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal-evaporated selenium as a hole-transporting material for planar perovskite solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Thermal-evaporated selenium as a hole-transporting material for planar perovskite solar cells Thermal-evaporated selenium as a hole-transporting material for planar perovskite solar cells](/preview/png/6533919.png)
چکیده انگلیسی
A hole-transporting layer is essential for effective operation of planar perovskite solar cells. Hole-transporting materials (HTMs) used so far are mainly based on organic semiconductors, which are usually expensive and relatively instable compared with inorganic materials. In this article, crystalline selenium (c-Se) prepared by thermal evaporation followed by annealing at low temperature was used as the hole-transporting layer for the planar perovskite solar cells in the device structure of fluorine-doped tin oxide (FTO)/SnO2/perovskite/selenium/Au. The device employing c-Se as HTM displayed enhanced long-term stability, keeping 80% of the original efficiency after 40 days in ambient environment. However, the power conversion efficiency of 8.3% remains low compared with the device based on spiroOMeTAD, which results from higher recombination in the c-Se device as determined by impedance spectroscopy. Thermal-evaporated selenium could be a low-cost and easy-fabrication HTM for efficient and stable perovskite solar cells after reducing the recombination in devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 185, October 2018, Pages 130-135
Journal: Solar Energy Materials and Solar Cells - Volume 185, October 2018, Pages 130-135
نویسندگان
Yunxiang Di, Qiang Zeng, Chun Huang, Ding Tang, Kaiwen Sun, Chang Yan, Ying Wang, Shanming Ke, Liangxing Jiang, Xiaojing Hao, Yanqing Lai, Fangyang Liu,