کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6534244 | 1420643 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization and improvement of a front graded bandgap CuInGaSe2 solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops from Egmax (at the junction limit) to Egmin (in the vicinity of the rear contact).We introduce an effective absorption coefficient based on this variation. We will demonstrate that this gradual profile contributes to an improvement up to 171Â mV of the open circuit voltage Voc of the cell that is linked to the modification of the internal electrical field distribution within the absorber. However, a joint reduction of 1.50Â mA/cm2 of short circuit current density, Jsc, is observed. Overall, the conversion efficiency increases from 19.2%, for a uniform bandgap absorber structure, to 24.9% in that case of gradual bandgap. Additionally, we investigate the impact of absorber thickness and temperature on cell characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 180, 15 June 2018, Pages 381-385
Journal: Solar Energy Materials and Solar Cells - Volume 180, 15 June 2018, Pages 381-385
نویسندگان
A. Aissat, H. Arbouz, J.P. Vilcot,