کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6534543 | 49277 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of Cu(In,Ga)Se2 superstrate devices with alternative buffer layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Superstrate Cu(In,Ga)Se2 (CIGS) solar cells are prepared in the structure SLG/TCO/buffer/CIGS/Au with CIGS deposited onto the buffer layer by a single stage co-evaporation process. Three buffer materials - CdS deposited by chemical surface deposition, ZnSe and ZnO by RF magnetron sputtering - are tested in the superstrate structure. The best cell achieves 8.6% efficiency with the ZnO buffer after light soaking and forward bias treatments. The efficiency of devices with CdS or ZnSe buffers are less than 4%. The junction formation between the absorber and buffer layers are investigated by x-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy. For CdS/CIGS and ZnSe/CIGS superstrate devices extensive inter-diffusion between the absorber and buffer layer under CIGS growth condition is the critical problem. For ZnO/CIGS superstrate cells GaxOy formation at the junction interface and unfavorable conduction band alignment are the main factors that limit the device performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 157, December 2016, Pages 85-92
Journal: Solar Energy Materials and Solar Cells - Volume 157, December 2016, Pages 85-92
نویسندگان
Peipei Xin, Jes K. Larsen, Fei Deng, William N. Shafarman,