کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6534555 | 49277 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Performance ratio study based on a device simulation of a 2D monolithic interconnected Cu(In,Ga)(Se,S)2 solar cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An increased P1 width and decreased absorber doping concentration was found to increase the P1 (parallel) shunt resistance due to a reduced horizontal hole current component between the separated back electrodes. A higher shunt resistance enhances the low light behaviour of the solar cell and consequently leads to an improvement of the PR. A decreased Mo(Se,S)2 band gap and doping concentration increases the valence band barrier at the Cu(In,Ga)(Se,S)2/Mo(Se,S)2 interface and we obtained a moderate P1 shunt improvement accompanied by a strong PR enhancement. The increased barrier height enhanced the low light and temperature behaviour of the fill factor finally leading to the PR enhancement.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 157, December 2016, Pages 146-153
Journal: Solar Energy Materials and Solar Cells - Volume 157, December 2016, Pages 146-153
نویسندگان
Christian Schubbert, Patrick Eraerds, Michael Richter, Jürgen Parisi, Ingo Riedel, Thomas Dalibor, Jörg Palm,