کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535216 | 49293 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
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چکیده انگلیسی
Potential-induced degradation (PID) in photovoltaic (PV) modules based on n-type single crystalline Si solar cell (front junction cell) was experimentally generated by applying negative voltage from an Al plate, which was attached on the front cover glass of the module, to the Si cell. The solar energy-to-electricity conversion efficiency of the standard n-type Si PV module decreased from 17.8% to 15.1% by applying â1000 V at 85 °C for 2 h. The external quantum efficiency in the range from 400 to 600 nm significantly decreased after the PID test, although no change was observed from 800 to 1100 nm. PID in n-type Si PV modules can be basically explained by enhanced front surface recombination between electron and hole on the Si cell, whereas the polarity of voltage leading to PID depends on structure of Si cell. An ionomer encapsulant instead of EVA has significantly suppressed PID in n-type Si PV modules.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 140, September 2015, Pages 361-365
Journal: Solar Energy Materials and Solar Cells - Volume 140, September 2015, Pages 361-365
نویسندگان
Kohjiro Hara, Sachiko Jonai, Atsushi Masuda,