کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535427 | 49300 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of micro-electrical properties of Cu2ZnSnSe4 thin films using scanning probe microscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation of micro-electrical properties of Cu2ZnSnSe4 thin films using scanning probe microscopy Investigation of micro-electrical properties of Cu2ZnSnSe4 thin films using scanning probe microscopy](/preview/png/6535427.png)
چکیده انگلیسی
We report on a local potential and resistance mapping of Cu2ZnSnSe4 (CZTSe) films using nm-resolution electrical scanning probe microscopies of scanning Kelvin probe force microscopy and scanning spreading resistance microscopy. We have conducted a comparative study with high-performance Cu2(In,Ga)Se2 (CIGSe) film. Both CZTSe and CIGSe were deposited by co-evaporation of elements in vacuum. The results show that the microelectrical properties of the two polycrystalline materials are similar-higher potential and lower resistance on the grain boundaries (GBs) than on grain surfaces-suggesting inverted GB carrier polarity of these films. The consistent GB properties in contrast to the large difference in photovoltaic output of the two materials suggest that factors other than the GBs are responsible for the low photovoltaic output of CZTSe device.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 132, January 2015, Pages 342-347
Journal: Solar Energy Materials and Solar Cells - Volume 132, January 2015, Pages 342-347
نویسندگان
C.-S. Jiang, I.L. Repins, C. Beall, H.R. Moutinho, K. Ramanathan, M.M. Al-Jassim,