کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535660 | 49301 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of evolution of dislocation clusters in high performance multicrystalline silicon
ترجمه فارسی عنوان
بررسی تکامل خوشه های جابجایی در سیلیکون چندبلوری با کارایی بالا
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کلمات کلیدی
عیوب، جابجایی، رشد از ذوب، کریستالیزاسیون صنعتی، سیلیکون نیمه رسانا، سلول های خورشیدی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
چکیده انگلیسی
The evolution of dislocation clusters in High Performance Multicrystalline Silicon was studied by means of photoluminescence imaging, defect etching and Electron Backscatter Diffraction. Cluster height was found to increase as function of lateral size. The largest clusters were found to exist in twinned grains or spanning multiple grains. Dislocation clusters were seen to originate at CSL boundaries and terminate at random angle grain boundaries. It is suggested that termination, as well as generation of dislocation clusters are growth phenomena, which are controlled by the dislocations following the growth front, and that the successful termination of dislocation clusters is a simple function of distance between grain boundaries able to terminate the dislocations at the growth front. It is also suggested that crystal orientation may influence the mechanism through the ability of dislocation clusters to traverse the grain laterally from a generation to a termination site.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 130, November 2014, Pages 679-685
Journal: Solar Energy Materials and Solar Cells - Volume 130, November 2014, Pages 679-685
نویسندگان
G. Stokkan, Y. Hu, Ã. Mjøs, M. Juel,