کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6535682 | 49311 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Firing-stable PassDop passivation for screen printed n-type PERL solar cells based on a-SiNx:P
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Rear side passivation and local back surface field formation are two of the main technological challenges for n-type PERL silicon solar cells. A promising approach is the PassDop process. This process combines a phosphorous doped passivation layer deposited on the rear side with a subsequent laser process to create both a local contact opening as well as a local back surface field. In this paper we introduce a new layer system based on doped amorphous silicon nitride (the fPassDop process) which is able to passivate the n-type surface after a firing step as typically used for screen printed contacts. After the firing step, an effective recombination velocity <5 cm/s can be reached with this layer. The measured sheet resistance is in the range of 60 Ω/sq after the laser process. In a first test the fPassDop process is applied to small area solar cells achieving a conversion efficiency of 21.3% (675 mV Voc). Additionally, we fabricated large area n-type solar cells with screen printed front side contacts achieving 20.1% efficiency and Voc of 668 mV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 126, July 2014, Pages 96-100
Journal: Solar Energy Materials and Solar Cells - Volume 126, July 2014, Pages 96-100
نویسندگان
Bernd Steinhauser, Muhammad bin Mansoor, Ulrich Jäger, Jan Benick, Martin Hermle,