کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6536170 | 49326 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Processed optimization for excellent interface passivation quality of amorphous/crystalline silicon solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This study evaluates the interface passivation quality of the amorphous/crystalline heterointerface and the performance of the heterojunction with intrinsic thin layer solar cells via values of a plasma parameter characterized by the deposition pressure (p)Ãelectrode distance (d). Increasing the product of pÃd leads to a lower crystalline fraction and higher hydrogen content, and enhances the c-Si surface passivation. This pÃd evaluation factor is also compared with other evaluation factors, such as the silane depletion fraction and film-crystallinity. The tendencies of minority carrier lifetimes with respect to these evaluation factors were similar. Using the highest pÃd value of 48, the photovoltaic parameter of the device yielded an open-circuit voltage of up to 710Â mV, in turned giving an efficiency of 19.12%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 117, October 2013, Pages 174-177
Journal: Solar Energy Materials and Solar Cells - Volume 117, October 2013, Pages 174-177
نویسندگان
Sangho Kim, Vinh Ai Dao, Youngseok Lee, Chonghoon Shin, Jinjoo Park, Jaehyun Cho, Junsin Yi,