کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
656434 1458043 2016 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Silicon carbide particle formation/engulfment during directional solidification of silicon
ترجمه فارسی عنوان
تشکیل سیلیسیم کاربید ذرات / جذب در طی انقباض جهت سیلیکون
کلمات کلیدی
خنک کننده جهت سلول های خورشیدی، ناامیدی، ذرات، جریان حرارتی رانده شده
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
چکیده انگلیسی
The formation of SiC particles and their engulfment in directional solidification of silicon for PV application are investigated. A mathematical model is proposed to describe reaction mechanism, particle formation, forces acted on the particles in silicon melt, and engulfment/pushing of particles by the solidification interface. Simulation results show that carbon and SiC particle concentrations in silicon ingot are mainly affected by the impurities of feedstock and furnace material, the interface shape and the growth rate. It is proposed that the precipitation of SiC particles occurs when carbon concentration reaches to its solubility. Carbon is accumulated in the central region of silicon melt due to the concaved interface and thermally driven flow. The density of SiC particle is higher than the melt and the particles are entrapped to the interface quickly. Whether the particle is pushed away or engulfed by the moving solidification interface is determined by the particle size and solidification interface moving rate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 99, August 2016, Pages 76-85
نویسندگان
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