Binder-free novel Cu4SnS4 electrode for high-performance supercapacitors

The obtained porous microstructure of the CTS thin film electrode using SILAR method and its electrochemical characterization in solid-state symmetric configuration. The CV and GCD curves are accomplished in the potential window range of 0-1.2 V. The device exhibited 89.9% stability retention after 1000 CV cycles.300