کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6604570 | 1424096 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Regulation mechanism of bottleneck size on Li+ migration activation energy in garnet-type Li7La3Zr2O12
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
The garnet-type lithium ion conductor, nominal Li7La3Zr2O12 (LLZO) has received a lot of interest as they are considered usable as solid electrolytes in lithium battery. The Li+ migration bottleneck size of garnet-type Li7La3Zr2O12 (LLZO) solid electrolyte are posed significant effect on Li+ transportation property. However, the regulation mechanism of the bottleneck size on the Li+ migration activation energy is not clear. In the study, equivalent substitution of tetravalent M4+ (M4+â¯=â¯Ge4+, Ti4+, Sn4+, Hf4+ and Te4+) ions on Zr site of Li7La3M0.25Zr1.75O12 is designed to regulate the bottleneck size. X-ray absorption fine structure (XAFS) is applied to detect the quantitative structural information of M-doped LLZO. Experimental and calculations results show that the M4+ substitution regulate the Li+ migration bottleneck size via changing M-O bond length. The M-O bond length increases with the increase of M4+ doping ion radius which results in the increase of the bottleneck size. However, larger bottleneck size is not necessarily favorable for Li+ migration. Ge4+ and Ti4+ doped LLZO have smaller bottleneck size than the un-doped LLZO, which is more suitable for Li+ migration (corresponds to lower Ea of 0.28â¯eV, 0.29â¯eV, respectively). This study is of great significance for obtaining optimum lithium ion migration channel size for LLZO, and the regulation mechanism is universality for crystal ion conductors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 261, 20 January 2018, Pages 137-142
Journal: Electrochimica Acta - Volume 261, 20 January 2018, Pages 137-142
نویسندگان
Yanhua Zhang, Fei Chen, Junyang Li, Lianmeng Zhang, Jiajun Gu, Di Zhang, Katsuhiko Saito, Qixin Guo, Ping Luo, Shijie Dong,