کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6608222 | 459538 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In-situ fabrication of reduced graphene oxide (rGO)/ZnO heterostructure: surface functional groups induced electrical properties
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: In-situ fabrication of reduced graphene oxide (rGO)/ZnO heterostructure: surface functional groups induced electrical properties In-situ fabrication of reduced graphene oxide (rGO)/ZnO heterostructure: surface functional groups induced electrical properties](/preview/png/6608222.png)
چکیده انگلیسی
Reduced graphene oxide (rGO)/ZnO heterostructure was prepared via electrochemical deposition directly on Hummers method derived rGO membranes and the corresponding diodes had been fabricated. Rectifying I-V curve was obtained by modifying the functional groups on the surface of rGO. Further investigation for GO based transistors showed that the conductivity of rGO could vary from n-type to p-type under different annealing conditions. Based on Lerf-Klinowski model and X-Ray photoelectron spectroscopy, it was found that the C-sp2, hydroxyl and epoxy in rGO would be responsible for the change of electrical properties. It was also concluded that reasonable p-type conductivity of rGO for obtaining rectifying rGO/ZnO heterostructure occurred while the percentage of C-sp2 content was about 54% with the C-sp2/(OHÂ +Â C-O-C) ratio around 1.6.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 196, 1 April 2016, Pages 558-564
Journal: Electrochimica Acta - Volume 196, 1 April 2016, Pages 558-564
نویسندگان
Xinyi Chen, Hongchen Guo, Tun Wang, Miao Lu, Taihong Wang,