کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6614787 459626 2013 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
NO2 sensing performance of p-type intermediate size porous silicon by a galvanostatic electrochemical etching method
چکیده انگلیسی
In this paper, a kind of novel p-type intermediate size porous silicon (Intermediate-PS) with large specific surface area and highly ordered pore channel was successfully prepared by a galvanostatic electrochemical etching method. The microstructure and surface bonding configuration of the PS characterized by using field emission scanning electron microscope (FESEM) and Fourier transform infrared spectroscopy (FTIR), respectively. The freshly prepared PS could achieve stable surface passivation after one week storage in air due to the effect of natural oxidation. Moreover, the NO2 gas-sensing performances of the PS sensor were systematically investigated at different temperatures ranging from room temperature (25 °C) to 100 °C over NO2 concentrations in the range of 0.125-2 ppm. The gas sensor based on the Intermediate-PS showed a typical p-type semiconductor behavior together with perfect reproducibility and very rapid response-recovery speed at room temperature. The good sensing properties of the Intermediate-PS sensor can be attributed to its favorable microstructure features. In addition, the conceivable sensing mechanism has also been discussed in detail.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 113, 15 December 2013, Pages 354-360
نویسندگان
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