کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
662775 | 1458181 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model](/preview/png/662775.png)
چکیده انگلیسی
A novel model for three-dimensional (3D) global simulation of heat transfer in a Czochralski (CZ) furnace for silicon crystal growth was proposed. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite control-volume method. A mixed 2D/3D space discretization technique was developed, and concepts of 2D domain and 3D domain for a CZ furnace were proposed. This technique enables 3D global simulations to be conducted with moderate requirements of computer memory and computation time. A 2D global simulation was carried out to obtain good initial conditions for 3D global modeling to speed up the global iteration. The model was demonstrated to be valid and reasonable.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 48, Issues 21–22, October 2005, Pages 4481–4491
Journal: International Journal of Heat and Mass Transfer - Volume 48, Issues 21–22, October 2005, Pages 4481–4491
نویسندگان
Lijun Liu, Koichi Kakimoto,