کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
662983 1458154 2007 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
پیش نمایش صفحه اول مقاله
Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices
چکیده انگلیسی

Experiments on removing high heat fluxes from GaN-on-SiC semiconductor dies using microchannel coolers are described. The dies contain an AlGaN/GaN heterostructure operated as a direct current resistor, providing a localized heat source. The active dimensions of the heat source are sized to represent the spatially-averaged heat flux that would appear in microwave power amplifiers. A wide variety of microchannel materials and configurations are investigated, allowing a comparison of performance and the resulting GaN temperatures. Silicon and AlN microchannel coolers exhibit good performance at lower power densities (1000–1200 W/cm2 over 3 × 5 mm2 to 2 × 5 mm2 active areas). Polycrystalline chemical vapor deposited (CVD) SiC microchannel coolers are found to be extremely promising for higher power densities (3000–4000 W/cm2 over 1.2 × 5 mm2 active areas with 120 °C GaN temperature). A hybrid microchannel cooler consisting of low-cost CVD diamond on polycrystalline CVD SiC exhibits moderately better performance (20–30%) than polycrystalline CVD SiC alone.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 50, Issues 23–24, November 2007, Pages 4767–4779
نویسندگان
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