Fabrication of asymmetric independent dual-gate FinFET using sidewall spacer patterning and CMP processes

Fabrication of asymmetric independent dual-gate FinFET using sidewall spacer patterning and CMP processes

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volumes 185–186, 5 January 2018, Pages 29-34

Hyungjin Kim, Min-Chul Sun, Sungmin Hwang, Hyun-Min Kim, Jong-Ho Lee, Byung-Gook Park,