Minimized program disturb for vertically stacked junctionless charge-trapping flash memory devices by adopting in-situ doped poly-silicon channel

Minimized program disturb for vertically stacked junctionless charge-trapping flash memory devices by adopting in-situ doped poly-silicon channel

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 5-9

Hsin-Kai Fang, Kuei-Shu Chang-Liao, Chun-Yuan Chen, Po-Hao Chen, Dong-Yan Li, Chien-Pang Huang, Chang-Hong Shen, Jia-Min Shieh,