Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy

Electronic defect states in thermally-grown SiO2/4H-SiC structure measured by total photoelectron yield spectroscopy

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 264-268

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki,