A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs

A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 147, 1 November 2015, Pages 281-284

G. Sereni, L. Larcher, L. Vandelli, D. Veksler, T. Kim, D. Koh, G. Bersuker,