کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
6943440 1450341 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation of defect formation in porous ultra low k film (k = 2.5) for 28 nm technological node
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Investigation of defect formation in porous ultra low k film (k = 2.5) for 28 nm technological node
چکیده انگلیسی
In order to improve complementary metal oxide semiconductor (CMOS) device performance, the porous ultra low k (p-ULK) film with the dielectric constant ranging 2.4-2.6 was used as inter metal dielectric (IMD) for 28 nm technological node and beyond, which reduced the parasitic capacitance effect between interconnecting lines. In back end of the line (BEOL), the IMD layer using the p-ULK film as the insulator reached a total of 8 levels, therefore, the defect produced from the p-ULK film resulted in the low yield of the product. In this paper, the defect formation of the p-ULK film was investigated to understand the correlation between the defects and shortages of the chamber hardware and process. The defect scan tool, scanning electron microscope (SEM) reviewer, focus ion beam (FIB) and transmission electron microscope (TEM) instruments were used to inspect and analyze the type, size, and location of the defects in the p-ULK film. The experimental results indicated that the showerhead, liquid divert valve, chamber bottom feed clean, and season process played the important roles in the defect formation of the p-ULK film. Therefore, the various kinds of the solutions to eliminate p-ULK film defects were put forward.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 140, 1 June 2015, Pages 6-10
نویسندگان
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