Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 137, 2 April 2015, Pages 141-145

E. Baer, P. Evanschitzky, J. Lorenz, F. Roger, R. Minixhofer, L. Filipovic, R.L. de Orio, S. Selberherr,