In situ Raman characterization of CeO2 thin films sputtered on (1Â 1Â 1) Si in order to optimize the post growth annealing parameters

- Resistive switching in CeOx films are interesting for Nonvolatile Memory Application.
- Raman spectroscopy is used to optimize in situ the post-annealing of CeO2 film.
- The annealing parameters are found more quickly by using Raman characterization.
- A good crystallinity of films is obtained by using in situ Raman characterization.