High dielectric permittivity impact on SOI Double-Gate Mosfet

Replacement of SiO2 gate dielectric by ZrO2 or HfO2 in DG SOI MOSFETS leads to increased device performance in terms of high drive current and small subthreshold slope and lower leakage current. ZrO2 appears more beneficial as compared to HfO2 due to the lower conduction band offset and thinner physical thickness of HfO2.