The new dry method of mask (relief) formation by direct electron-beam etching of resist

- The new dry method of some type resists etching in E-beam exposure is proposed.
- The etching mechanism is radical-chain depolymerization of resist to monomer.
- The etching rates of PMMA resist by this method are rather high.
- Proposed method is effective in 3D spatial structures creation.
- This method can increase the productivity and reduces cost of 3D E-beam lithography.