Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy

► The effects of insertion layers on the structural and optical properties of InP QDs are investigated. ► The samples are fabricated on GaAs (1 0 0) by metal-organic vapour phase epitaxy (MOCVD). ► The insertion layers are GaP and GaP/InGaP. ► The insertion layer thickness affects the shape, density, size distribution and photoluminescence emission of InP QD. ► The GaP/InGaP samples are attributed to the best size distribution and photoluminescence intensity and line-width