Reduction of silicon dioxide interfacial layer to 4.6 à EOT by Al remote scavenging in high-κ/metal gate stacks on Si

- Al diffusion into gate stack leads to EOT reduction.
- Process reduces the EOT at low temperature (400 °C) and is suitable for replacement gate processes.
- Extensive interface studies support the electrical measurements.
- Reactions are in agreement with thermodynamical considerations.