The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures

- We report the physical analysis of MG/ZrN/Zr-graded Dy2O3/Si MIS structures.
- The key process parameters such as postannealing temperature and doping location are examined.
- Electrical properties such as flatband voltage shift, leakage current, EOT are shown and calculated.