Selector-less RRAM with non-linearity of device for cross-point array applications

- We achieved selector-less RRAM characteristics.
- Transition from linear conduction to non-linear conduction was observed by controlling the compliance current.
- Non-linearity of device was observed under high operating currents.
- The suboxide region, which was formed thermally, might affect to exhibit non-linearity.
- The obtained non-linearity can suppress the leakage current in the cross-point array applications.