FinFETs with ONO BOX for multi-bit unified memory

- Advanced FinFETs are fabricated on the ONO buried insulator.
- The nitride buried insulator can trap charges for the flash memory operation.
- The same device was investigated for the 1T-DRAM operation.
- By combining nonvolatile and volatile, multi-bit 1T-DRAM operation was obtained.
- Analog/logic and memory operation can be performed at the same cell.