Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

Study of the effect of tunneling through the traps inside the insulator on small-signal admittance of the MOS structure

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 109, September 2013, Pages 1-4

Jakub Jasiński, Andrzej Mazurak, Bogdan Majkusiak,