Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Electron spin resonance analysis of sputtering-induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 109, September 2013, Pages 240-243

A. Stesmans, A.P.D. Nguyen, M. Houssa, V.V. Afanas'ev, Zs. Tőkei, M.R. Baklanov,