Analytical model for anomalous Positive Bias Temperature Instability in La-based HfO2 nFETs based on independent characterization of charging components

- PBTI improvement in HfO2 nFETs achieved by a controlled insertion of La.
- Anomalous negative ΔVTH due to charge exchange between high-k and metal gate.
- Anomalous and conventional PBTI components are decoupled and studied separately.
- Analytical model including both components for lifetime extrapolation is presented.