High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes

• High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated.
• Cu/diamond Schottky diodes showed clear rectification up to ~ 700 °C and have high stability at ~ 400 °C.
• The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C.

High-temperature and high-voltage characteristics of Cu/diamond Schottky diodes were investigated. Cu Schottky diodes showed clear rectification up to ~ 700 °C. The current–voltage characteristics of the diodes at 400 °C were almost unchanged after keeping them for 30 h, implying they have high stability at ~ 400 °C. The diodes showed specific on-resistance and breakdown voltage of 83.4 mΩ cm2 and 713 V at 400 °C, respectively, which are comparable to reported highest values for diamond Schottky diodes and close to the theoretical limit for 6H-SiC at several hundred °C. These results indicate that Cu/diamond Schottky diodes are promising for high-temperature power applications.