کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
7054377 1458018 2018 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental and theoretical investigation of millisecond-pulse laser ablation biased Si avalanche photodiodes
ترجمه فارسی عنوان
بررسی تجربی و نظری از لیزر امولسیون میلی ثانیه موجب برانگیختگی فتودئید ​​های تابلو سی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی جریان سیال و فرایندهای انتقال
چکیده انگلیسی
Bump formation was observed for the first time on the surface of biased Si avalanche photodiodes (APDs) fabricated using millisecond-pulse laser ablation, and the mechanism of the phenomenon was studied experimentally and theoretically. Surface maximum temperatures and damaged areas were tested under different laser pulse durations. The surface maximum temperature was ∼1500 K, which is lower than the melting point of Si when the laser pulse duration and energy density were 1.0 ms and 50 J/cm2, respectively, but there was a damaged area on the surface. A longitudinal temperature distribution simulation showed that the laser ablation first occurred at the PN junction of the APD, and the mechanism of the phenomenon was Joule heating. This result differs significantly from results obtained for laser ablation of other photodetectors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Heat and Mass Transfer - Volume 122, July 2018, Pages 391-394
نویسندگان
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