کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117422 | 1461360 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of surface migration on InGaN/GaN multiple quantum wells selectively grown on periodic stripe openings separated by large SiO2 covered spacing on Si (111) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
InGaN/GaN multiple quantum wells (MQWs) were selectively grown on patterned GaN/AlN/Si (111) templates with periodic stripe openings separated by large SiO2 covered spacing. In comparison with the conventional epitaxial lateral overgrowth, the migration behaviours of group-III adatoms on the large mask region has a distinct effect on the structural and optical properties of InGaN/GaN MQWs selectively grown on the narrow stripe openings. In order to control them, a wide stripe window nearby the narrow one was adopted to modulate the local growth environments in our experiment. Flat and faceted InGaN/GaN MQWs stripes with trapezoidal cross section composed of basal (0001) plane and two semipolar {112Ì
2} facets were obtained. The optical properties were investigated by the microscopic photoluminescence (micro-PL) measurement. The difference in emission peak positions observed by scanning the excitation laser across the stripes is related to the surface migration behaviour of the group-III adatoms on the SiO2 masks.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 87, 15 November 2018, Pages 181-186
Journal: Materials Science in Semiconductor Processing - Volume 87, 15 November 2018, Pages 181-186
نویسندگان
Xiaobiao Han, Hui Luo, Hang Yang, Jie Chen, Changming Zhong, Jiezhi Liang, Jieying Xing, Zhisheng Wu, Yang Liu, Baijun Zhang,