کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7117519 | 1461363 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemically derived Zn0.90-xMn0.05Fe0.05AlxO thin films: Tuning of crystallite/grain size, optical and dielectric constants and ferromagnetic properties through Al substitutions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this study, the role of Al substitution levels (xâ¯=â¯0.0-0.05) on the structure, surface morphology, optical constants, dielectric, electrical and magnetic properties of chemically derived Zn0.90-xMn0.05Fe0.05AlxO (ZMFO:Alx) thin films were systematically investigated. The results demonstrated the incorporation of Mn2+, Fe2+ and Al3+ within ZnO wurtzite structure without any secondary phases. The crystalline quality of thin films was decreased systematically until xâ¯=â¯0.01 and then increased again for xâ¯=â¯0.03 and 0.05 Al substitution levels. Surface morphology analysis indicated homogeneous and smooth surface with spherical grains indicated the same trend with the crystalline quality in size upon on the Mn2+, Fe2+ and Al3+ substitution levels. The confirmation of the Mn2+, Fe2+ and Al3+ions incorporated in ZnO host structure was successfully observed via XPS analysis. Optical analyses confirmed the blue shift of the band edge depended on the substitution of Mn2+, Fe2+ and Al3+ within the ZnO crystal. Comparatively, the higher refractive index, extinction coefficient and dielectric constants were obtained for the ZMFO: Alx thin films than those of ZnO, Zn0.95Mn0.05O (ZMO) and Zn0.90Mn0.05Fe0.05O (ZMFO) thin films. Hall measurements showed that all the film samples have n-type conductivity and it varies according to the crystallite size/grain sizes. Magnetic measurements showed higher room temperature ferromagnetic response for the ZMFO: Alx thin films than those of ZMO and ZMFO thin films due to having different oxygen vacancy concentrations. The highest room temperature was found for the Al substitution level of xâ¯=â¯0.03 thin film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 1-9
Journal: Materials Science in Semiconductor Processing - Volume 84, September 2018, Pages 1-9
نویسندگان
Y. Babur, A. Tumbul, M. Yıldırım,